Metal-graphene heterojunction metal interconnects, method of forming the same, and semiconductor device including the same

Abstract

Disclosed herein are a metal-graphene heterojunction metal interconnect, a method of forming the same, and a semiconductor device including the same. The method includes: a) forming a carbon source layer by depositing a carbon source on a top surface of a substrate; b) forming a metal catalyst layer by depositing a metal catalyst on the carbon source layer; and c) carrying out heat treatment on the substrate comprising the carbon source layer and the metal catalyst layer. The graphene can be formed by carrying out the heat treatment only once irrespectively of the number of substrates, and accordingly to the manufacturing time and manufacturing cost of the metal interconnect are reduced, and a damage to the metal interconnect by the heat treatment is not caused.