The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Dec. 21, 2016
Applicant:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Inventors:
Yugo Orihashi, Toyama, JP;
Atsushi Moriya, Toyama, JP;
Assignee:
HITACHI KOKUSAI ELECTRIC INC., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/205 (2006.01); C23C 16/46 (2006.01); C23C 16/52 (2006.01); C23C 16/455 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); C23C 16/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02211 (2013.01); C23C 16/0272 (2013.01); C23C 16/455 (2013.01); C23C 16/45523 (2013.01); C23C 16/45557 (2013.01); C23C 16/52 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes forming a seed layer on a substrate by alternately performing supplying a halogen-based first process gas to the substrate and supplying a non-halogen-based second process gas to the substrate, and forming a film on the seed layer by supplying a third process gas to the substrate. A pressure of a space where the substrate exists in the act of supplying the first process gas is set higher than a pressure of the space where the substrate exists in the act of supplying the second process gas.