The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Sep. 08, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Hoonki Kim, Seoul, KR;
Yongho Kim, Seoul, KR;
Changnam Park, Seoul, KR;
Taejoong Song, Seongnam-si, KR;
Woojin Rim, Hwaseong-si, KR;
Jonghoon Jung, Seongnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A memory device includes a memory cell array including a plurality of memory cells arranged in a plurality of columns including a normal column and a redundancy column for repairing the normal column, a plurality of peripheral logic circuits including a normal peripheral logic circuit and a redundancy peripheral logic circuit for repairing the normal peripheral logic circuit, and a first path selection logic circuit configured to form first paths between the plurality of columns and the plurality of peripheral logic circuits, based on at least one defect from among a defect in at least one of the plurality of columns or a defect in at least one of the plurality of peripheral logic circuits.