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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10134476 B1

PDFFull Text
Date of Patent:
Nov. 20, 2018

Filed:

Dec. 29, 2017

Memory system using non-linear filtering scheme and read method thereof

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventors:

Dongsup Jin, Seoul, KR;

Pilsang Yoon, Hwaseong-si, KR;

Hong Rak Son, Anyang-si, KR;

Junjin Kong, Yongin-si, KR;

Young-Seop Shim, Seoul, KR;

Jinman Han, Seongnam-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:

F. Chau & Associates, LLC

Primary Examiner:

Pho M Luu

Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 16/26 (2006.01); G06F 3/06 (2006.01); G11C 16/04 (2006.01); G11C 7/02 (2006.01); G11C 16/28 (2006.01); G11C 29/02 (2006.01); G11C 29/50 (2006.01); G11C 11/56 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G06F 3/061 (2013.01); G06F 3/0653 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G11C 7/02 (2013.01); G11C 16/0466 (2013.01); G11C 16/0483 (2013.01); G11C 16/28 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); G11C 29/50004 (2013.01); H05K 999/99 (2013.01); G11C 11/5642 (2013.01); G11C 2029/0409 (2013.01);
Abstract

A method for controlling a nonvolatile memory device includes requesting a plurality of first sampling values from the nonvolatile memory device, each of the first sampling values representing the number of memory cells having a threshold voltage between a first sampling read voltage and a second sampling read voltage. The first sampling values are processed through a non-linear filtering operation to estimate the number of memory cells having the threshold voltage between the first sampling read voltage and the second sampling read voltage.

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