The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2018

Filed:

Jan. 24, 2017
Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventors:

Ofer Shapira, Tel-Aviv, IL;

Idan Alrod, Herzliya, IL;

Eran Sharon, Rishon Lezion, IL;

Assignee:

SanDisk Technologies LLC, Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); G06F 11/20 (2006.01); G11C 16/04 (2006.01); G11C 11/56 (2006.01); G06F 3/06 (2006.01); G06F 11/07 (2006.01); G06F 11/10 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G06F 11/2094 (2013.01); G06F 3/064 (2013.01); G06F 3/0619 (2013.01); G06F 3/0652 (2013.01); G06F 3/0655 (2013.01); G06F 3/0665 (2013.01); G06F 3/0679 (2013.01); G06F 11/073 (2013.01); G06F 11/1048 (2013.01); G06F 11/1068 (2013.01); G11C 7/1006 (2013.01); G11C 11/5628 (2013.01); G11C 11/5635 (2013.01); G11C 16/0483 (2013.01);
Abstract

Data is programmed in a respective block of non-volatile three dimensional memory. The block contains a plurality of rows of subblocks, each row having S subblocks. Programming data in the respective block includes successively programming data in individual rows of the respective block. Programming data in each row is completed prior to programming data in a next row. Programming data in a row includes successively programming data in individual subblocks of the row, in a predefined order. The programming of data in each subblock is completed prior to programming data in a next subblock. While programming data in each individual subblock, a number of XOR signatures, sufficient in number to enable recovery from a short circuit that disables two or three word lines, are generated in volatile memory, and then copied to non-volatile memory prior to programming data in a next subblock in the respective block.


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