The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Apr. 17, 2015
Futurewei Technologies, Inc., Plano, TX (US);
Hongmin Chen, Davis, CA (US);
Qianfan Xu, San Jose, CA (US);
Li Yang, San Jose, CA (US);
Xiao Shen, San Bruno, CA (US);
Dawei Zheng, Irvine, CA (US);
Yusheng Bai, Los Altos Hills, CA (US);
Hongbing Lei, San Jose, CA (US);
Eric Dudley, San Jose, CA (US);
Futurewei Technologies, Inc., Plano, TX (US);
Abstract
A metal-oxide semiconductor (MOS) optical modulator including a doped semiconductor layer having a waveguide structure, a dielectric layer disposed over the waveguide structure of the doped semiconductor layer, a gate region disposed over the dielectric layer, wherein the gate region comprises a transparent electrically conductive material having a refractive index lower than that of silicon, and a metal contact disposed over the gate region. The metal contact, the gate region, and the waveguide structure of the doped semiconductor layer may be vertically aligned with each other.