The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2018

Filed:

Jul. 06, 2017
Applicants:

Tsinghua University, Beijing, CN;

Hon Hai Precision Industry Co., Ltd., New Taipei, TW;

Inventors:

Ke-Nan Zhang, Beijing, CN;

Ming-Zhe Yan, Beijing, CN;

Shu-Yun Zhou, Beijing, CN;

Yang Wu, Beijing, CN;

Shou-Shan Fan, Beijing, CN;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 19/00 (2006.01); C30B 9/06 (2006.01); C30B 25/00 (2006.01); C30B 29/46 (2006.01);
U.S. Cl.
CPC ...
C30B 29/46 (2013.01); C01B 19/007 (2013.01); C30B 9/06 (2013.01); C30B 25/00 (2013.01); C01P 2006/42 (2013.01);
Abstract

The disclosure relates to a semimetal compound of Pt and a method for making the same. The semimetal compound is a single crystal material of PtTe. The method comprises: providing a PtTepolycrystalline material; placing the PtTepolycrystalline material in a reacting chamber; placing chemical transport medium in the reacting chamber; evacuating the reacting chamber to be vacuum less than 10 Pa; placing the reacting chamber in a temperature gradient, wherein the reacting chamber has a first end in a temperature from 1200 degree Celsius to 1000 degree Celsius and a second end opposite to the first end and in a temperature from 1000 degree Celsius to 900 degree Celsius; and keeping the reacting chamber in the temperature gradient for 10 days to 30 days.


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