The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Mar. 09, 2015
Qualcomm Incorporated, San Diego, CA (US);
Mazhareddin Taghivand, Campbell, CA (US);
Yashar Rajavi, Mountain View, CA (US);
Alireza Khalili, Sunnyvale, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Certain aspects of the present disclosure generally relate to generating a large electrical resistance. One example circuit generally includes a first transistor having a gate, a source connected with a first node of the circuit, and a drain connected with a second node of the circuit. The circuit may also include a voltage-limiting device connected between the gate and the source of the first transistor, wherein the device, if forward biased, is configured to limit a gate-to-source voltage of the first transistor such that the first transistor operates in a sub-threshold region. The circuit may further include a second transistor configured to bias the voltage-limiting device with a current, wherein a drain of the second transistor is connected with the gate of the first transistor, a gate of the second transistor is connected with the first node, and a source of the second transistor is connected with an electric potential.