The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2018

Filed:

Feb. 19, 2016
Applicants:

Hiroki Matsuda, Zama, JP;

Yukio Murata, Tokyo, JP;

Inventors:

Hiroki Matsuda, Zama, JP;

Yukio Murata, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/335 (2006.01); H02M 3/28 (2006.01);
U.S. Cl.
CPC ...
H02M 3/33507 (2013.01); H02M 3/28 (2013.01);
Abstract

A semiconductor device for power supply control includes an over-current detection circuit which detects an over-current state on a secondary side of a transformer by comparing a voltage in proportion to current flowing in a primary-side winding wire with an over-current detection voltage; a control signal generation circuit which generates a control signal to turn off a switching element when the over-current detection circuit has detected the over-current state; and an over-current detection level generation circuit which generates the over-current detection voltage in accordance with an on-duty of a driving pulse of the switching element. The over-current detection level generation circuit is configured to generate the over-current detection voltage in accordance with: Vocp=Vint+a·ON Duty, where Vocp represents the over-current detection voltage, ON Duty represents the on-duty, Vint represents the over-current detection voltage to be a reference, and 'a' represents a correction coefficient.


Find Patent Forward Citations

Loading…