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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10128452 B1

PDFFull Text
Expired
Date of Patent:
Nov. 13, 2018

Filed:

Mar. 01, 2017

Hybrid junction field-effect transistor and active matrix structure

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ali Afzali-Ardakani, Ossining, NY (US);

Tze-Chiang Chen, Yorktown Heights, NY (US);

Bahman Hekmatshoartabari, White Plains, NY (US);

Ghavam G. Shahidi, Pound Ridge, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

L. Jeffrey Kelly

Otterstedt, Ellenbogen & Kammer, LLP

Primary Examiner:

Long Pham

Int. Cl.
CPC ...
H01L 51/05 (2006.01); H01L 27/28 (2006.01); H01L 27/32 (2006.01); H01L 27/12 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0508 (2013.01); H01L 27/1222 (2013.01); H01L 27/1251 (2013.01); H01L 27/286 (2013.01); H01L 27/326 (2013.01); H01L 27/3274 (2013.01); H01L 29/1066 (2013.01); H01L 29/66916 (2013.01); H01L 2227/323 (2013.01);
Abstract

Junction field-effect transistors including inorganic channels and organic gate junctions are used in some applications for forming high resolution active matrix displays. Arrays of such junction field-effect transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes.

Find Patent Forward Citations

Afzali-Ardakani, Ali. (2018). Hybrid junction field-effect transistor and active matrix structure (U.S. Patent No. 10128452). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10128452

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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