The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2018

Filed:

Dec. 16, 2015
Applicant:

Novaled Gmbh, Dresden, DE;

Inventors:

Markus Hummert, Dresden, DE;

Achim Bruch, Dresden, DE;

Christiane Köhn, Dresden, DE;

Max P. Nüllen, Dresden, DE;

Ulrich Heggemann, Dresden, DE;

Assignee:

Novaled GmbH, Dresden, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 35/24 (2006.01); H01L 51/00 (2006.01); C07D 213/84 (2006.01); C09K 11/06 (2006.01); C07C 255/51 (2006.01); C07D 239/30 (2006.01); H01L 51/50 (2006.01);
U.S. Cl.
CPC ...
H01L 51/005 (2013.01); C07C 255/51 (2013.01); C07D 213/84 (2013.01); C07D 239/30 (2013.01); C09K 11/06 (2013.01); H01L 51/001 (2013.01); H01L 51/0067 (2013.01); C07C 2601/02 (2017.05); C07C 2601/16 (2017.05); C09K 2211/1007 (2013.01); C09K 2211/1018 (2013.01); H01L 51/506 (2013.01); H01L 51/5088 (2013.01); H01L 2251/554 (2013.01);
Abstract

Provided are processes for preparing an electrically doped semiconducting material that includes a [3]-radialene p-dopant. Also provided are processes for preparing an electronic device containing a layer that includes a [3]-radialene p-dopant. The processes may include (i) loading an evaporation source with a [3]-radialene p-dopant and (ii) evaporating the [3]-radialene p-dopant at an elevated temperature and at a reduced pressure. The [3]-radialene p-dopant may be selected from compounds having a structure according to formula (I) herein.


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