The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2018

Filed:

Jun. 03, 2009
Applicants:

Stephan Kaiser, Regensburg, DE;

Andreas Ploessl, Regensburg, DE;

Inventors:

Stephan Kaiser, Regensburg, DE;

Andreas Ploessl, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/60 (2010.01); H01L 33/00 (2010.01); H01L 33/20 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0079 (2013.01); H01L 33/20 (2013.01); H01L 33/405 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method of producing an optoelectronic component, comprising the method steps: A) providing a growth substrate (); B) growing at least one semiconductor layer () epitaxially, to produce an operationally active zone; C) applying a metallic mirror layer () to the semiconductor layer (); D) applying at least one contact layer () for electronic contacting of the component; E) detaching the growth substrate () from the semiconductor layer (), so exposing a surface of the semiconductor layer (); and F) structuring the semiconductor layer () by means of an etching method from the side of the surface which was exposed in method step E).


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