The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2018

Filed:

Jan. 10, 2018
Applicant:

Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;

Inventors:

Seungho Yoon, Hwaseong-si, KR;

Bong-Kyun Kim, Hwaseong-si, KR;

Youngjun Kim, Seoul, KR;

Hongsick Park, Suwon-si, KR;

Byeong-Beom Kim, Asan-si, KR;

Sangwon Shin, Yongin-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1368 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 21/465 (2006.01); H01L 21/467 (2006.01); H01L 29/45 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/465 (2013.01); H01L 21/467 (2013.01); H01L 27/124 (2013.01); H01L 29/45 (2013.01); H01L 29/66969 (2013.01); G02F 1/1368 (2013.01); H01L 23/53238 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A thin film transistor substrate includes a thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode. Each of the source electrode and the drain electrode includes a wire layer and a protective layer. The protective layer includes zinc oxide in an amount greater than about 70% by weight and less than about 85% by weight and indium oxide in an amount greater than about 15% by weight and less than about 30% by weight.


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