The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Sep. 18, 2015
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Abstract
A semiconductor device capable of increasing a value of current that flows through the whole chip until a p-n diode in a unit cell close to a termination operates and reducing a size of the chip and a cost of the chip resulting from the reduced size, and including a second well region formed on both sides, as seen in plan view, of the entirety of a plurality of first well regions, a second ohmic electrode located over the second well region, a third separation region of a first conductivity type that is positioned closer to the first well regions than the second ohmic electrode in the second well region and that is formed to penetrate the second well region from a surface layer of the second well region in a depth direction, and a second Schottky electrode located on the third separation region.