The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Apr. 03, 2017
Applicant:
Fuji Electric Co., Ltd., Kanagawa, JP;
Inventors:
Manabu Takei, Ibaraki, JP;
Ryuji Yamada, Tokyo, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H03K 17/14 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/1608 (2013.01); H01L 29/66734 (2013.01); H03K 17/145 (2013.01);
Abstract
In a trench-gate vertical MOSFET, an n-type drift layer and p-type base layer are epitaxially grown on an nsilicon carbide substrate, and an nsource region and pcontact region are provided inside the p-type base layer. The first source electrode contacts the nsource region, and the second source electrode contacts the pcontact region. The first source electrode and second source electrode are separated from each other.
Takei, Manabu. (2018). Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device, and method of controlling silicon carbide semiconductor device (U.S. Patent No. 10128369). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10128369
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile