The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
May. 30, 2017
Infineon Technologies Dresden Gmbh, Dresden, DE;
Claus Dahl, Dresden, DE;
Dmitri Alex Tschumakow, Dresden, DE;
Infineon Technologies Dresden GMBH, Dresden, DE;
Abstract
A transistor comprising a semiconductor substrate comprising a collector region extending from a main surface of the semiconductor substrate into a substrate material. The transistor comprising a base structure arranged at the collector region along a thickness direction parallel to a direction of a normal of the main surface of the semiconductor substrate, where an emitter structure arranged at the base structure is averted from the semiconductor substrate and along the thickness direction. The transistor comprising a doped electrode layer arranged at a lateral surface region of the base structure and along a lateral direction perpendicular to the thickness direction. The doped electrode layer and the base structure form a monocrystalline connection.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile