The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Jan. 04, 2016
Boe Technology Group Co., Ltd., Beijing, CN;
Zuqiang Wang, Beijing, CN;
Yuqing Yang, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
The present disclosure provides a thin film transistor, a method for manufacturing the same, an array substrate and a display device. The method for manufacturing a thin film transistor includes providing a substrate, forming a gate electrode, a gate insulating layer, an amorphous silicon material active layer and a cap layer on the substrate successively, wherein The cap layer is provided with a pattern on a side of the cap layer away from the amorphous silicon material active layer, and the pattern is composed of at least one groove along a length direction of the active layer and at least one groove along a width direction of the active layer, subjecting the amorphous silicon material active layer to laser annealing treatment to transform the amorphous silicon material active layer into a low temperature polycrystalline silicon material active layer, and removing the cap layer.