The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Mar. 17, 2017
Applicant:
Massachusetts Institute of Technology, Cambridge, MA (US);
Inventors:
Jeffrey C. Grossman, Brookline, MA (US);
Brendan Derek Smith, Cambridge, MA (US);
Jatin Jayesh Patil, Brampton, CA;
Nicola Ferralis, Cambridge, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 29/32 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/32 (2013.01); H01L 21/30604 (2013.01); H01L 29/16 (2013.01);
Abstract
Methods for forming nanoporous semiconductor materials are described. The methods allow for the formation of micron-scale arrays of sub-10 nm nanopores in semiconductor materials with narrow size distributions and aspect ratios of over 400:1.