The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Mar. 18, 2015
Mitsubishi Electric Corporation, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
The present invention relates to a power semiconductor device which includes: a first conductivity-type silicon carbide semiconductor layer; a switching device which is formed on the silicon carbide semiconductor layer; a second conductivity-type electric field relaxation impurity region which is formed in a terminal portion of a formation region of the switching device and which relaxes an electric field of the terminal portion; and a first conductivity-type added region which is provided between second conductivity-type well regions of a plurality of unit cells that constitutes the switching device, and at least on an outer side of the electric field relaxation impurity region, and which has an impurity concentration higher than that in the silicon carbide semiconductor layer.