The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Apr. 25, 2016
Commissariat À L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Bernard Previtali, Grenoble, FR;
Abstract
A SOI substrate is covered by a semiconductor material pattern which includes a dividing pattern made from electrically insulating material. The dividing pattern is coated by one or more semiconductor materials. The semiconductor material pattern is covered by a gate electrode which is facing the dividing pattern. The semiconductor material pattern and the gate pattern are covered by a cap layer. The substrate is eliminated to access the source/drain regions. Two delineation patterns are formed to cover the source region and drain region and to leave the dividing pattern free. A second cap layer is deposited and access vias are formed to access the source/drain regions by elimination of the delineation patterns.