The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Apr. 12, 2017
Samsung Electronics Co., Ltd., Suwon-si, KR;
Zhe Wu, Suwon-si, KR;
Jeong Hee Park, Hwaseong-si, KR;
Dong Ho Ahn, Hwaseong-si, KR;
Jin Woo Lee, Seoul, KR;
Hee Ju Shin, Seoul, KR;
Ja Bin Lee, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
There is provided a non-volatile memory device which can enhance the reliability of a memory device by using an ovonic threshold switch (OTS) selection element including a multilayer structure. The non-volatile memory device includes a first electrode and a second electrode spaced apart from each other, a selection element layer between the first electrode and the second electrode, which is closer to the second electrode rather than to the first electrode, and which includes a first chalcogenide layer, a second chalcogenide layer, and a material layer disposed between the first and second chalcogenide layers. The first chalcogenide layer including a first chalcogenide material, and the second chalcogenide layer including a second chalcogenide material. A memory layer between the first electrode and the selection element layer includes a third chalcogenide material which is different from the first and second chalcogenide materials.