The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2018

Filed:

Dec. 16, 2015
Applicant:

Teledyne E2v Semiconductors Sas, Saint Egreve, FR;

Inventors:

Pierre Fereyre, Voreppe, FR;

Frédéric Mayer, Voiron, FR;

Pascal Douine, Voiron, FR;

Thierry Ligozat, Quaix-en-Chartreuse, FR;

Vincent Prevost, Seyssins, FR;

Bruno Diasparra, Seyssins, FR;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 21/00 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14643 (2013.01); H01L 27/14607 (2013.01); H01L 27/14621 (2013.01); H01L 27/14649 (2013.01); H01L 27/3227 (2013.01);
Abstract

The invention relates to color-image sensors. To benefit both from a good luminance resolution and a color accuracy that is not excessively degraded by the sensitivity of silicon to near-infrared radiation, the invention proposes to produce a mosaic of pixels comprising colored pixels (R), (G), (B), coated with color filters, which are distributed in the matrix, with white pixels (T) not coated with color filters and which are distributed in the matrix. The colored pixels include photodiodes constructed differently from the photodiodes of the white pixels, the different construction being such that the photodiodes of the colored pixels have a lower sensitivity to infrared radiation than the photodiodes of the white pixels.


Find Patent Forward Citations

Loading…