The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Jun. 29, 2017
Applicant:
Stmicroelectronics (Research & Development) Limited, Buckinghamshire, GB;
Inventor:
Laurence Stark, Edinburgh, GB;
Assignee:
STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED, Buckinghamshire, GB;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/762 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 21/76224 (2013.01); H01L 21/76237 (2013.01); H01L 27/14687 (2013.01);
Abstract
A method can be used to manufacture a charge storage cell with a first trench and a second trench in a substrate material. The first trench is filled with a doped material. The second trench is filled with a second trench material. The method includes causing the dopant to diffuse from the first trench to thereby provide a doped region adjacent to the first trench. The material from the first and second trenches is removed and at least one of the trenches is filled with a capacitive deep trench isolation material to provide capacitive deep trench isolation.