The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Jul. 24, 2017
Applicant:
Google Llc, Mountain View, CA (US);
Inventors:
Chung Chun Wan, San Jose, CA (US);
Boyd Albert Fowler, Sunnyvale, CA (US);
Assignee:
Google LLC, Mountain View, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 13/254 (2018.01); H04N 5/369 (2011.01); H04N 5/374 (2011.01); H04N 9/04 (2006.01); H04N 5/3745 (2011.01); H04N 5/225 (2006.01); H04N 5/33 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14612 (2013.01); H01L 27/14603 (2013.01); H01L 27/14621 (2013.01); H01L 27/14641 (2013.01); H01L 27/14645 (2013.01); H01L 27/14649 (2013.01); H01L 27/14656 (2013.01); H04N 5/3696 (2013.01); H04N 5/37457 (2013.01); H04N 9/045 (2013.01); H04N 13/254 (2018.05); H04N 5/2257 (2013.01); H04N 5/332 (2013.01);
Abstract
An image sensor is described having a pixel cell unit. The pixel cell unit has first, second and third transfer gate transistor gates on a semiconductor surface respectively coupled between first, second and third visible light photodiode regions and a first capacitance region. The pixel cell unit has a fourth transfer gate transistor gate on the semiconductor surface coupled between a first infrared photodiode region and a second capacitance region.