The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Feb. 16, 2017
Samsung Display Co., Ltd., Yongin-si, Gyeonggi-Do, KR;
Jae Woo Jeong, Suwon-si, KR;
SAMSUNG DISPLAY CO., LTD., Yongin-si, Gyeonggi-Do, KR;
Abstract
A thin film transistor array panel including: a substrate; a semiconductor layer disposed on the substrate; a source electrode and a drain electrode overlapping the semiconductor layer, and a gate electrode overlapping the semiconductor layer; and a first ohmic contact disposed between the semiconductor layer and the source electrode and a second ohmic contact disposed between the semiconductor layer and the drain electrode. The semiconductor layer includes a channel part that does not overlap the source electrode and the drain electrode. The first ohmic contact includes a first edge and the second ohmic contact includes a second edge. The first and second edges face each other across the channel part of the semiconductor layer. The first edge of the first ohmic contact is protruded from the source electrode toward the channel part and the second edge of the second ohmic contact is protruded from the drain electrode toward the channel part.