The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2018

Filed:

Jun. 20, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventors:

Dae-Jin Kwon, Seongnam-si, KR;

Kang-Ill Seo, Chungcheongbuk-Do, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 27/11 (2006.01); H01L 23/528 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); H01L 23/528 (2013.01); H01L 29/42356 (2013.01); H01L 29/42392 (2013.01); H01L 29/785 (2013.01); H01L 29/7827 (2013.01);
Abstract

A semiconductor device includes a substrate, a first pattern, a first gate electrode, and a second pattern. The first pattern is disposed on the substrate and extends in a first direction substantially vertical to an upper surface of the substrate, and includes a first part, a second part and a third part sequentially disposed on the substrate. The first gate electrode is connected to the second part and extends in a second direction different from the first direction. The second pattern is disposed on the substrate, extends in the first direction, is connected to the first part, and does not contact the first gate electrode.


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