Semiconductor device and manufacturing method thereof

Abstract

One method for manufacturing a semiconductor device includes: forming provisional active regions that are shaped such that active regions that are adjacent in an X direction are connected to each other, forming a sacrificial film, performing etching, including the sacrificial film, so as to form a plurality of first trenches that separate the active regions, embedding element-isolating insulating films in the first trenches and then removing the sacrificial film, forming first side-wall insulating films that cover the exposed side surfaces of the element-isolating insulating films and second side-wall insulating films that cover the side surfaces of the first side-wall insulating films, embedding cap insulating films in second trenches that appear due to the formation of the second side-wall insulating films, and forming a plurality of third trenches at the positions of the second side-wall insulating films and forming word lines thereunder.