The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Mar. 29, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Do Sun Lee, Suwon-si, KR;
Joon Gon Lee, Seoul, KR;
Na Rae Kim, Seoul, KR;
Chul Sung Kim, Seongnam-si, KR;
Do Hyun Lee, Seoul, KR;
Ryuji Tomita, Yongin-si, KR;
Sang Jin Hyun, Suwon-si, KR;
Abstract
Semiconductor devices may have a first semiconductor element including first active regions that are doped with a first conductivity-type impurity and that are on a semiconductor substrate, a first gate structure between the first active regions, and first contacts connected to the first active regions, respectively; and a second semiconductor element including second active regions that are doped with a second conductivity-type impurity different from the first conductivity-type impurity and that are on the semiconductor substrate, a second gate structure between the second active regions, and second contacts connected to the second active regions, respectively, and having a second length greater than a first length of each of the first contacts in a first direction parallel to an upper surface of the semiconductor substrate.