The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Apr. 23, 2012
Hermanus Leonardus Peek, Geldrop, NL;
Willem Hendrik Maes, Lommel, BE;
Wilco Klaassens, Eindhoven, NL;
Hermanus Leonardus Peek, Geldrop, NL;
Willem Hendrik Maes, Lommel, BE;
Wilco Klaassens, Eindhoven, NL;
TELEDYNE DALSA B.V., Eindhoven, NL;
Abstract
The invention relates to a semiconductor device comprising: i) a substrate () comprising an insulating layer (), wherein the electrically insulating layer () comprises a recess (), and ii) a first conductive wire (). The first conductive wire () comprises a first conductive sub-layer () provided within the recess (), and comprises a second conductive sub-layer () provided on the first conductive sub-layer () forming a shunt for the first conductive sub-layer (), wherein the first conductive sub-layer () comprises tungsten and the second conductive sub-layer () comprises aluminum, wherein the first conductive sub-layer () and the second conductive sub-layer () are substantially planar, and wherein the second conductive sub-layer () has substantially the same pattern as the first conductive sub-layer (). The invention provides a semiconductor device, wherein the charge transport problem is improved, while ensuring a large packing density and a full flat-topology. This advantage is particularly useful in high-speed and/or high resolution image sensors.