The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Jun. 29, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Viet Ha Nguyen, Yongin-si, KR;
Nae In Lee, Seoul, KR;
Thomas Oszinda, Hwaseong-si, KR;
Byung Hee Kim, Seoul, KR;
Jong Min Baek, Seoul, KR;
Tae Jin Yim, Yongin-si, KR;
Abstract
Methods for fabricating semiconductor devices may provide enhanced performance and reliability by recovering quality of a low-k insulating film damaged by a plasma process. A method may include forming a first interlayer insulating film having a trench therein on a substrate, filling at least a portion of the trench with a metal wiring region, exposing a surface of the metal wiring region and a surface of the first interlayer insulating film to a plasma in a first surface treatment process, then exposing the surface of the first interlayer insulating film to a recovery gas containing a methyl group (—CH) in a second surface treatment process, and then forming an etch stop layer on the metal wiring region and the first interlayer insulating film.