The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2018

Filed:

Jun. 13, 2017
Applicant:

Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;

Inventors:

Toshihiko Akiba, Tokyo, JP;

Hiromi Shigihara, Tokyo, JP;

Kei Yajima, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 23/498 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 21/4889 (2013.01); H01L 21/4846 (2013.01); H01L 21/4853 (2013.01); H01L 23/3114 (2013.01); H01L 23/5384 (2013.01); H01L 23/5389 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 23/49816 (2013.01); H01L 23/525 (2013.01); H01L 2224/03 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/11 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/94 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01);
Abstract

Provided is a semiconductor device with improved reliability that achieves the reduction in size. A semiconductor wafer is provided that has a first insulating member with an opening that exposes from which an upper surface of an electrode pad. Subsequently, after forming a second insulating member over a main surface of the semiconductor wafer, another opening is formed to expose the upper surface of the electrode pad. Then, a probe needle is brought into contact with the electrode pad, to write data in a memory circuit at the main surface of the semiconductor wafer. After covering the upper surface of the electrode pad with a conductive cover film, a relocation wiring is formed. In the Y direction, the width of the relocation wiring positioned directly above the electrode pad is equal to or smaller than the width of the opening formed in the first insulating member.


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