The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Aug. 03, 2017
University of Utah Research Foundation, Salt Lake City, UT (US);
Ling Zang, Salt Lake City, UT (US);
Daniel Jacobs, Salt Lake City, UT (US);
University of Utah Research Foundation, Salt Lake City, UT (US);
Abstract
A method for thermally induced recrystallization of a film having a perovskite structure can include exposing the perovskite structure to a liquid phase induction atmosphere sufficient to at least partially liquefy the film. The substrate with the film can be heated while in the atmosphere to a heating temperature above a critical recrystallization temperature until the film recrystallizes to reform the perovskite structure with reduced defects and increased grain size. The liquid phase induction atmosphere can be purged, and the substrate with the film having the reformed perovskite structure can be allowed to cool. The film having the perovskite structure can have a formula ABX, (RA)ABX, or (RA)ABX, where A is a monovalent cation, B is divalent metal cation, n is an integer, X is a halide ion, RA is an alkylammonium cation and RAis an alkyldiammonium cation.