The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Jul. 02, 2015
Applicant:
Yale University, New Haven, CT (US);
Inventors:
Xiao Sun, New Haven, CT (US);
Tso-Ping Ma, Branford, CT (US);
Assignee:
Yale University, New Haven, CT (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); G11C 29/52 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 11/2275 (2013.01); G11C 29/52 (2013.01); G11C 11/223 (2013.01); G11C 11/5657 (2013.01); G11C 2211/5648 (2013.01);
Abstract
Exemplary embodiments of the present disclosure are directed to circuitry for effective operation of Ferroelectric-gated FET (FeFET) memories. Exemplary embodiment of the present disclosure includes circuits and/or circuit blocks to facilitate memory refresh, error checking and correcting (ECC), reading and sensing memory cells, program and erase operations, and other control and periphery operations for FeFET memory cell arrays.