The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2018

Filed:

Mar. 31, 2014
Applicant:

Tohoku University, Miyagi, JP;

Inventors:

Shigetoshi Sugawa, Miyagi, JP;

Rihito Kuroda, Miyagi, JP;

Assignee:

Tohoku University, Miyagi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J 1/42 (2006.01); G01J 1/16 (2006.01); H01L 27/14 (2006.01); H01L 31/09 (2006.01); H01L 27/142 (2014.01); H01L 27/144 (2006.01);
U.S. Cl.
CPC ...
G01J 1/429 (2013.01); G01J 1/1626 (2013.01); H01L 27/142 (2013.01); H01L 27/1443 (2013.01); H01L 31/09 (2013.01); H05K 999/99 (2013.01); Y02E 10/50 (2013.01);
Abstract

Provided is a solid-state light-receiving device for ultraviolet light, which is capable of measuring an irradiation amount of UV-rays, which are harmful to a human body, accurately and appropriately with a simple structure, and of being formed easily and integrally with sensors of peripheral circuits, and which is small, lightweight, low cost, and suitable for mobile or wearable applications. The solid-state light-receiving device for ultraviolet light includes a first photodiode, a second photodiode, and a differential circuit to which signals based on outputs of those photodiodes are input. The solid-state light-receiving device for ultraviolet light also includes semiconductor layer regions, which are formed in and on the above-mentioned photodiodes, and each of which includes a highest concentration position of semiconductor impurities.


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