The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Feb. 07, 2014
Kabushiki Kaisha Toyota Chuo Kenkyusho, Nagakute-shi, Aichi-ken, JP;
Denso Corporation, Kariya-shi, Aichi-ken, JP;
Showa Denko K.k., Tokyo, JP;
Itaru Gunjishima, Nagakute, JP;
Yusuke Kanzawa, Nagakute, JP;
Yasushi Urakami, Miyoshi, JP;
Masakazu Kobayashi, Hikone, JP;
KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, Nagakute, JP;
DENSO CORPORATION, Kariya, JP;
SHOWA DENKO K.K., Tokyo, JP;
Abstract
A SiC single crystal includes, in a plane substantially parallel to a c-plane thereof, a region (A) in which edge dislocations having a Burgers vector (A) in a specific direction are unevenly distributed, and a region (B) in which basal plane dislocations having a Burgers vector (B) in a specific direction are unevenly distributed. The region (A) is located in a <1-100> direction with respect to a facet portion, while the region (B) is located in a <11-20> direction with respect to the facet portion. A SiC substrate is produced by cutting a SiC wafer from the SiC single crystal in a direction substantially parallel to the c-plane, and cutting the SiC substrate from the SiC wafer such that the SiC substrate mainly contains one of the region (A) and the region (B). A SiC device is fabricated using the SiC substrate.