The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2018

Filed:

Feb. 26, 2018
Applicant:

Wake Forest University, Winston-Salem, NC (US);

Inventors:

David Carroll, Winston-Salem, NC (US);

Robert Summers, Clemmons, NC (US);

Yonghua Chen, Cleveland Heights, OH (US);

Assignee:

Wake Forest University, Winston-Salem, NC (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 51/52 (2006.01); H05B 33/08 (2006.01); H01L 33/30 (2010.01); H01L 33/00 (2010.01); H01L 33/42 (2010.01); H01L 51/50 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5296 (2013.01); H01L 33/0041 (2013.01); H01L 33/30 (2013.01); H01L 33/42 (2013.01); H01L 51/50 (2013.01); H01L 51/5206 (2013.01); H01L 51/5234 (2013.01); H05B 33/08 (2013.01); H01L 51/0035 (2013.01); H01L 51/0037 (2013.01); H01L 51/0039 (2013.01); H01L 51/0043 (2013.01); H01L 51/0077 (2013.01); H01L 51/502 (2013.01); H01L 51/5016 (2013.01); H01L 2251/303 (2013.01); H01L 2251/5376 (2013.01); H01L 2251/564 (2013.01);
Abstract

An electroluminescent device described herein, in one aspect, comprises a first electrode and second electrode and a light emitting layer positioned between the first and second electrodes. A current injection gate is positioned between the first electrode and the light emitting layer or the second electrode and the light emitting layer. In some embodiments, the current injection gate comprises a semiconductor layer of electronic structure restricting injected current flow from the first or second electrode through the semiconductor layer as a function of alternating current voltage frequency applied to the first and second electrodes.


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