The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2018
Filed:
Mar. 04, 2016
Renesas Electronics Corporation, Tokyo, JP;
Takashi Tonegawa, Ibaraki, JP;
Keiji Sakamoto, Ibaraki, JP;
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Abstract
An object is to prevent a short failure in magnetic tunnel junction and thereby suppress a semiconductor device having a magnetic memory cell from having deteriorated reliability. First, a data reference layer and a cap layer are patterned. After formation of an oxygen-free first insulating film on their side walls, a base layer, a data recording layer, and a tunnel barrier layer are patterned. During patterning of the base layer, data recording layer, and tunnel barrier layer, adhesion of a metal substance of the data reference layer and the cap layer to the side wall of the tunnel barrier layer can be prevented because the data reference layer and the cap layer are covered by the first insulating film.