The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2018
Filed:
Mar. 10, 2016
Abb Technology Ag, Zurich, CH;
ABB Schweiz AG, Baden, CH;
Abstract
It is the object of the invention to provide a power semiconductor rectifier with a low on-state-voltage and high blocking capability. The object is attained by a power semiconductor rectifier comprising: a drift layer having a first conductivity type; and an electrode layer forming a Schottky contact with the drift layer, wherein the drift layer includes a base layer having a peak net doping concentration, below 1·10cmand a barrier modulation layer which is in direct contact with the electrode layer to form at least a part of the Schottky contact, wherein a net doping concentration of the barrier modulation layer is in a range between 1·10cmand 1·10cmand wherein the barrier modulation layer has a layer thickness in a direction vertical to the interface between the electrode layer and the barrier modulation, layer of at least 1 nm and less than 0.2 μm.