The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2018
Filed:
Dec. 13, 2017
Mitsubishi Electric Corporation, Tokyo, JP;
Koji Tanaka, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
It is an object of the present invention to provide a semiconductor device capable of adjusting a V-Etrade-off characteristic without a life-time control and a power conversion device having the semiconductor device. A semiconductor device according to the present invention includes a p-type anode layer including a donor impurity and an acceptor impurity. An acceptor impurity concentration of the p-type anode layer is equal to or larger than a donor impurity concentration of the p-type anode layer, an acceptor impurity concentration of the p-type anode layer is equal to or larger than a donor impurity concentration of the p-type anode layer, and a donor impurity concentration of the p-type anode layer is equal to or larger than a donor impurity concentration of the n-type drift layer.