The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2018
Filed:
Apr. 17, 2015
Applicant:
Joled Inc., Chiyoda-ku, Tokyo, JP;
Inventor:
Yuta Sugawara, Tokyo, JP;
Assignee:
JOLED INC., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78606 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 21/02233 (2013.01); H01L 21/02252 (2013.01); H01L 21/02565 (2013.01); H01L 21/02592 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 29/247 (2013.01); H01L 29/78693 (2013.01); H01L 27/3262 (2013.01);
Abstract
A method of manufacturing a TFT substrate includes the steps of forming an oxide semiconductor layer above a substrate, forming a first oxide film on the oxide semiconductor layer, performing oxidation processing on the oxide semiconductor layer after formation of the first oxide film, and forming a second oxide film on the first oxide film after the oxidation processing.
Quick Actions:
Sugawara, Yuta. (2018). Thin-film transistor substrate and method of manufacturing the same (U.S. Patent No. 10121898). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10121898
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile