The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2018
Filed:
Jul. 15, 2016
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, CN;
Yong Deng, Shenzhen, CN;
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Shenzhen, Guangdong, CN;
Abstract
The present invention provides a manufacturing method of a top gate thin-film transistor, which includes forming a reducing metal layer on an oxide semiconductor layer and applying laser annealing to reduce the oxide semiconductor layer that is covered with the reducing metal layer to conductors to respectively form a source contact zone and a drain contact zone, such that the source contact zone and the drain contact zone that have been reduced to conductors are used to respectively contact a source electrode and a drain electrode thereby greatly reducing the contact resistance of the source electrode and the drain electrode and improving the performance of a top gate thin-film transistor. The manufacturing process is simple.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile