The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2018
Filed:
Jun. 23, 2017
Hyundai Motor Company, Seoul, KR;
Kia Motors Corporation, Seoul, KR;
NackYong Joo, Hanam-si, KR;
Youngkyun Jung, Seoul, KR;
Junghee Park, Suwon-si, KR;
JongSeok Lee, Suwon-si, KR;
Dae Hwan Chun, Gwangmyeong-si, KR;
Hyundai Motor Company, Seoul, KR;
Kia Motors Corporation, Seoul, KR;
Abstract
A semiconductor device may include an n− type layer sequentially disposed at a first surface of an n+ type silicon carbide substrate; a p type region disposed in the n− type layer; an auxiliary n+ type region disposed on the p type region or in the p type region; an n+ type region disposed in the p type region; an auxiliary electrode disposed on the auxiliary n+ type region and the p type region; a gate electrode separated from the auxiliary electrode and disposed on the n− type layer; a source electrode separated from the auxiliary electrode and the gate electrode; and a drain electrode disposed at a second surface of the n+ type silicon carbide substrate, wherein the auxiliary n+ type region and the n+ type region are separated from each other, and the source electrode is in contact with the n+ type region.