The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2018
Filed:
Jun. 02, 2017
Hyundai Autron Co., Ltd., Seongnam-si, KR;
Young Joon Kim, Suwon-si, KR;
Hyuk Woo, Incheon, KR;
Tae Yeop Kim, Seoul, KR;
Han Sin Cho, Hwaseong-si, KR;
Tae Young Park, Gunpo-si, KR;
Ju Hwan Lee, Suwon-si, KR;
HYUNDAI AUTRON CO., LTD, Seongnam-Si, KR;
Abstract
Provided is a power semiconductor device comprising a gate electrode in a trench of a substrate; a body region having a first conductivity type on one side of the gate electrode; a source region having a second conductivity type adjacent to the gate electrode; a floating region having a first conductivity type on the other side of the gate electrode; an edge doped region having a first conductivity type spaced apart from the floating region and electrically connected to the source region; an edge junction isolation region having a second conductivity type between the floating region and the edge doped region; and a drift region having a second conductivity type below the floating, edge doped, and edge junction isolation regions, wherein the doping concentration of a second conductivity type in the edge junction isolation region is higher than the doping concentration of a second conductivity type in the drift region.