IDiyas

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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10121780 B1

PDFFull Text
Date of Patent:
Nov. 06, 2018

Filed:

Aug. 16, 2016

Devices related to barrier for metallization of gallium based semiconductor

Applicant:

Skyworks Solutions, Inc., Woburn, MA (US);

Inventors:

Cristian Cismaru, Newbury Park, CA (US);

Peter J. Zampardi, Jr., Newbury Park, CA (US);

Assignee:

Skyworks Solutions, Inc., Woburn, MA (US);

Attorney:

Knobbe, Martens, Olson & Bear, LLP

Primary Examiner:

Stephen Bradley

Int. Cl.
CPC ...
H01L 29/737 (2006.01); H01L 27/06 (2006.01); H01L 21/66 (2006.01); H04M 1/02 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 21/8252 (2006.01); H01L 49/02 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0658 (2013.01); H01L 21/8252 (2013.01); H01L 22/14 (2013.01); H01L 27/0605 (2013.01); H01L 28/60 (2013.01); H01L 29/0692 (2013.01); H01L 29/205 (2013.01); H01L 29/41708 (2013.01); H01L 29/66242 (2013.01); H01L 29/737 (2013.01); H01L 29/7371 (2013.01); H04M 1/026 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/49171 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/15184 (2013.01); H01L 2924/15192 (2013.01);
Abstract

Disclosed are structures and methods related to a barrier layer for metallization of a selected semiconductor such as indium gallium phosphide (InGaP). In some embodiments, the barrier layer can include tantalum nitride (TaN). Such a barrier layer can provide desirable features such as barrier functionality, improved adhesion of a metal layer, reduced diffusion, reduced reactivity between the metal and InGaP, and stability during the fabrication process. In some embodiments, structures formed in such a manner can be configured as an emitter of a gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) or an on-die high-value capacitance element.

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