The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2018
Filed:
Mar. 10, 2017
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Toshiba Memory Corporation, Tokyo, JP;
Abstract
According to one embodiment, an electrostatic discharge semiconductor device includes one or more wiring layers first disposed over a substrate, including: a wiring electrically connected at a first connecting point of a pad, a second wiring electrically connected at a second connecting point of a ground wiring, and a third wiring electrically connected at a third connecting point of the ground wiring; a first transistor formed in the substrate comprising a first diffusion region electrically connected to the first wiring, a second diffusion region electrically connected to the second wiring, and a gate electrically connected to the ground wiring; and a second transistor formed in the substrate comprising the first diffusion region electrically connected to the first wiring, a third diffusion region electrically connected to the third wiring, and a gate electrically connected to the ground wiring, wherein, a first resistance value of a first current pathway leading from the first connecting point to the second connecting point via the first transistor is different from a second resistance value of a second current pathway leading from the first connecting point to the third connecting point via the second transistor.