The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2018
Filed:
Sep. 26, 2016
Novatek Microelectronics Corp., Hsinchu, TW;
Chun-Yu Lin, Hsinchu, TW;
Jie-Ting Chen, Yilan County, TW;
Ming-Dou Ker, Hsinchu County, TW;
Tzu-Chien Tzeng, Hsinchu, TW;
Keko-Chun Liang, Hsinchu, TW;
Ju-Lin Huang, Hsinchu County, TW;
Novatek Microelectronics Corp., Hsinchu, TW;
Abstract
A silicon controlled rectifier including a semiconductor substrate, first and second semiconductor wells, first and second semiconductor regions, third and fourth semiconductor regions and a silicide layer is provided. The first and the second semiconductor wells are formed in the semiconductor substrate. The first and the second semiconductor regions are respectively formed in the first and the second semiconductor wells in spaced apart relation. The third and the fourth semiconductor regions are respectively formed in the first and the second semiconductor wells. The silicide layer is formed on the third and the fourth semiconductor regions. The silicon controlled rectifier is at least suitable for high frequency circuit application. The silicon controlled rectifier has a relatively low trigger voltage, a relatively high electrostatic discharge level, and a relatively low capacitance.