The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2018

Filed:

Jan. 06, 2016
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Yukiteru Matsui, Aichi, JP;

Takahiko Kawasaki, Aichi, JP;

Akifumi Gawase, Mie, JP;

Kenji Iwade, Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/321 (2006.01); H01L 21/768 (2006.01); B24B 37/04 (2012.01); H01L 21/306 (2006.01); B24B 1/00 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3212 (2013.01); B24B 1/00 (2013.01); B24B 37/044 (2013.01); H01L 21/30625 (2013.01); H01L 21/31053 (2013.01); H01L 21/7684 (2013.01); H01L 21/76819 (2013.01);
Abstract

In accordance with an embodiment, a manufacturing method of a semiconductor device includes forming, on a substrate, protruding portions with first films on the surfaces thereof, respectively, forming a second film different from the first films so as to fill a depressed portion between the protruding portions and to cover the protruding portions, processing in such a manner that the top surface of the second film on the depressed portion is higher than the top surface of the second film on the protruding portions after forming the second film to cover the protruding portions, and polishing the second film on the depressed and protruding portions to expose the first films.


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