The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2018

Filed:

Nov. 12, 2015
Applicant:

President and Fellows of Harvard College, Cambridge, MA (US);

Inventors:

Eric Mazur, Concord, MA (US);

Benjamin Franta, Elkader, IA (US);

Michael J. Aziz, Concord, MA (US);

David Pastor, Cambridge, MA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/268 (2006.01); H01L 29/06 (2006.01); H01L 31/0236 (2006.01); H01L 31/18 (2006.01); H01L 31/0288 (2006.01); H01L 31/036 (2006.01); H01L 31/068 (2012.01); H01L 21/02 (2006.01); B23K 26/0622 (2014.01); B23K 26/073 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2686 (2013.01); B23K 26/0624 (2015.10); B23K 26/0732 (2013.01); B23K 26/0738 (2013.01); H01L 21/02532 (2013.01); H01L 29/0665 (2013.01); H01L 31/0288 (2013.01); H01L 31/02363 (2013.01); H01L 31/036 (2013.01); H01L 31/068 (2013.01); H01L 31/1804 (2013.01); H01L 31/1864 (2013.01); H01L 31/1872 (2013.01);
Abstract

In one aspect, a method of processing a semiconductor substrate is disclosed, which comprises incorporating at least one dopant in a semiconductor substrate so as to generate a doped polyphase surface layer on a light-trapping surface, and optically annealing the surface layer via exposure to a plurality of laser pulses having a pulsewidth in a range of about 1 nanosecond to about 50 nanoseconds so as to enhance crystallinity of said doped surface layer while maintaining high above-bandgap, and in many embodiments sub-bandgap optical absorptance.


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