The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2018
Filed:
Sep. 14, 2017
Applicant:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Inventors:
Arito Ogawa, Toyama, JP;
Shin Hiyama, Toyama, JP;
Assignee:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/673 (2006.01); C23C 16/50 (2006.01); C23C 16/32 (2006.01); C23C 16/34 (2006.01); H01L 21/677 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02167 (2013.01); C23C 16/325 (2013.01); C23C 16/345 (2013.01); C23C 16/50 (2013.01); H01L 21/0217 (2013.01); H01L 21/67389 (2013.01); H01L 21/67383 (2013.01); H01L 21/67778 (2013.01);
Abstract
A technique capable of forming a side wall of a gate electrode having high resistance-to-etching and low leakage current is provided. A method of manufacturing a semiconductor device according to the technique includes: (a) loading a substrate into a processing space in a process vessel, the substrate having thereon a gate electrode and an insulating film formed on a side surface of the gate electrode as a side wall; and (b) forming an etching-resistant film containing carbon and nitrogen on a surface of the insulating film by supplying a carbon-containing gas into the processing space.