The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2018
Filed:
Apr. 04, 2014
National Instruments Corporation, Austin, TX (US);
Christopher G. Regier, Cedar Park, TX (US);
NATIONAL INSTRUMENTS CORPORATION, Austin, TX (US);
Abstract
A single semiconductor-based junction may be used to create a voltage reference, and temperature compensate the voltage reference, by time-multiplexing the voltage reference between different current drive levels. That is, the value of the current driven through the single junction may be repeatedly varied in a recurring manner. In case the junction is a zener diode, the current may be repeatedly switched between forward and reverse directions. As long as the temperature coefficients (in ppm/° C.) of the different voltages developed responsive to the different currents across the junction are different, a weighting of the different voltage values yield a zero temperature coefficient voltage reference value. To implement a bandgap reference, a single diode-connected bipolar junction transistor may alternately be forward-biased using a first current and at least a second current. A weighting of the (at least) two resulting Vbe (base-emitter voltage) drops may yield a zero temperature coefficient bandgap voltage.